Reduction of capping layer resistance area product for magnetic device applications
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGuenole Jan, Ru-Ying Tong
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGuenole Jan, Ru-Ying Tong
Estimating the term…
A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.
A capped ferromagnetic layer having perpendicular-to-plane magnetic anisotropy, comprising:
A TMJ spin torque transfer cell comprising:
Dependencies are inferred from the claim text.