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US 10,312,428 B2Granted
Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device
AssigneeMurata Manufacturing Co., Ltd.
InventorsShinsuke Ikeuchi, Toshimaro Yoneda, Yoshitaka Matsuki, Naoyuki Endo
Life of this patent
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Abstract
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
Claims12
A piezoelectric thin film comprising a composition represented by a general formula:
- (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
A target comprising a composition represented by a general formula:
- (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x are within the ranges of 1≤m≤1.05, 0≤n≤0.065, and 0≤x≤1.
Dependencies are inferred from the claim text.