Semiconductor light emitting element and backlight assembly including the same

A backlight assembly comprising:

• a circuit board;
• and
• a semiconductor light emitting element installed on the circuit board,
• wherein the semiconductor light emitting element includes:
• a light emitting element chip including a first pad, a second pad, an upper surface and a side surface;
• a wavelength conversion layer formed on the upper surface and the side surface of the light emitting element chip;
• a sidewall reflection part having an inner surface facing the light emitting element chip, the inner surface being parallel to the side surface of the light emitting element chip and being spaced apart from the side surface of the light emitting element chip;
• and
• a bottom surface reflection part protruding from a lower portion of the sidewall reflection part and having an arc shape, and
• wherein the sidewall reflection part and the bottom surface reflection part are configured to reflect light in a direction in which the light penetrates through an upper surface of the wavelength conversion layer, the light being generated from the light emitting element chip,
• wherein the light emitting element chip includes:
• a first semiconductor layer having a first polarity;
• a second semiconductor layer having a second polarity and disposed lower than the first semiconductor layer;
• and
• an active layer disposed between the first semiconductor layer and the second semiconductor layer,
• wherein a height of the bottom surface reflection part is equal to or greater than that of the active layer, and
• wherein a bottom surface of the second semiconductor layer contacts directly with an upper side of the circuit board.

A semiconductor light emitting element comprising:

• a light emitting element chip including a first pad, a second pad, an upper surface and a side surface;
• a wavelength conversion layer formed on the upper surface and the side surface of the light emitting element chip;
• a sidewall reflection part having an inner surface in contact with the wavelength conversion layer, the inner surface being parallel to the side surface of the light emitting element chip and being spaced apart from the side surface of the light emitting element chip with the wavelength conversion layer being disposed between the inner surface of the sidewall reflection part and the side surface of the light emitting element;
• and
• a bottom surface reflection part protruding from a lower portion of the sidewall reflection part towards the light emitting element chip,
• wherein the light emitting element chip includes:
• a first semiconductor layer having a first polarity;
• a second semiconductor layer having a second polarity and disposed lower than the first semiconductor layer;
• and
• an active layer disposed between the first semiconductor layer and the second semiconductor layer,
• wherein a height of the bottom surface reflection part is equal to or higher than that of the active layer, and
• wherein a bottom surface of the second semiconductor layer is exposed to a lower side of the semiconductor light emitting element.