Optoelectronic semiconductor component and method for producing the same

A method for producing a component wherein the component comprises a semiconductor body, a first metal layer and a second metal layer, wherein

• the first metal layer is arranged between the semiconductor body and the second metal layer, wherein the first metal layer has a continuous form,
• the component has a passivation layer formed on a side of the first metal layer facing away from the second metal layer, wherein the first metal layer extends through a through-hole of the passivation layer,
• the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer,
• the component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer, wherein the first metal layer has an opening through which the plated-through hole extends in the vertical direction,
• the second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space, wherein the first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component, and
• in plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity,
• and wherein the second metal layer is laterally delimited by a molding,
• the laterally spaced-apart subregions of the second metal layer are held together by the molding,
• and the molding, with the second metal layer, forms a carrier of the component, in which the semiconductor body is provided, wherein
• an electrically conductive layer is formed on a side of the first metal layer which is averted from the semiconductor body, such that the electrically conductive layer is electrically connected to the plated-through hole in certain regions, and
• the second metal layer is galvanically applied to the electrically conductive layer.

A component having a semiconductor body, a first metal layer and a second metal layer, wherein

• the first metal layer is arranged between the semiconductor body and the second metal layer,
• a passivation layer formed on a side of the first metal layer facing away from the second metal layer, wherein the first metal layer extends through a through-hole of the passivation layer,
• the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer,
• the component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer, wherein the first metal layer has an opening through which the plated-through hole extends in the vertical direction,
• the second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space, wherein the first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component, and
• in plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity, in which the first metal layer is configured as a continuous, mechanically stabilizing, preferably self-supporting, layer of the component and/or
• wherein the active layer or the entire semiconductor body has no point which is not mechanically supported by the first metal layer or by the second metal layer.