Group III nitride semiconductor luminescence element
AssigneeStanley Electric Co., Ltd.
InventorsToshiyuki Obata, Tomoaki Satou
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Abstract
A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ⅓ or more of a diffusion length Ls.
Claims9
A group III nitride semiconductor luminescence element, comprising:
- a substrate,
- a n-type layer arranged on the substrate,
- an active layer laminated on the n-type layer, and
- a p-type layer laminated on the active layer,
- wherein the active layer and the p-type layer are partially removed on the n-type layer to form an exposed face of the n-type layer and a mesa structure comprising remains of the active layer and the p-type layer,
- wherein a p-electrode is provided on the p-type layer,
- wherein a n-electrode is provided on at least a part of the exposed face of the n-type layer,
- wherein from a top view of the group III nitride semiconductor luminescence element, the mesa structure has a projection part surrounded by the n-electrode, and
- wherein at the projection part, the p-electrode is not formed within a range from an edge of the mesa structure to 1) less than ⅓ of a diffusion length Ls or 2) less than 12 μm.
A group III nitride semiconductor luminescence element, comprising:
- a substrate;
- a n-type layer on the substrate;
- an active layer laminated on the n-type layer;
- and
- a p-type layer laminated on the active layer,
- wherein the active layer and the p-type layer are partially removed on the n-type layer to form an exposed face of the n-type layer, and an n-electrode is provided on at least a part of the exposed face,
- wherein a p-electrode is provided on the p-type layer, and the p-electrode is recessed from an outer peripheral part of the p-type layer by less than ⅓ of a diffusion length Ls or less than 12 μm.
Dependencies are inferred from the claim text.