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US 10,312,402 B2Granted
P-type diffusion layer forming composition
AssigneeHitachi Chemical Company, Ltd.
InventorsYouichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi
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Abstract
The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
Claims12
A method for producing a photovoltaic cell, including:
- applying, on a semiconductor substrate, from 0.01 g/m2 to 100 g/m2 of a composition for forming a p-type diffusion layer, the composition comprising an acceptor element-containing glass powder and a dispersion medium;
- and
- subjecting the substrate to a thermal diffusion treatment at a temperature of from 600° C. to 1000° C. to form a p-type diffusion layer,
- wherein the acceptor element is included in the glass powder such that vaporization of the acceptor element is suppressed,
- wherein the softening point of the acceptor element-containing glass powder is from 300° C. to 900° C.,
- wherein the p-type diffusion layer has a sheet resistance of from 35Ω/□ to 190Ω/□, and
- wherein the shape of the acceptor element-containing glass powder is selected from the group consisting of a substantially spherical shape, a flat shape, a block shape, a plane shape, and a scale-like shape.
4 more elements
A method for producing a p-type diffusion layer, including:
- applying, on a semiconductor substrate, from 0.01 g/m2 to 100 g/m2 of a composition for forming a p-type diffusion layer, the composition comprising an acceptor element-containing glass powder and a dispersion medium;
- and
- conducting a thermal diffusion treatment at a temperature of from 600° C. to 1000° C.,
- wherein the acceptor element is included in the glass powder such that vaporization of the acceptor element is suppressed,
- wherein the softening point of the acceptor element-containing glass powder is from 300° C. to 900° C.,
- wherein the p-type diffusion layer has a sheet resistance of from 35Ω/□ to 190Ω/□, and
- wherein the shape of the acceptor element-containing glass powder is selected from the group consisting of a substantially spherical shape, a flat shape, a block shape, a plane shape, and a scale-like shape.
4 more elements
Dependencies are inferred from the claim text.