Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

An electronic semiconductor chip comprising:

• a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region;
• a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface;
• a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on the whole surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region;
• and
• a nucleation layer of oxygen-containing AlN is directly applied in such a way that the entire growth surface, the entire planar region and the surface structures are covered by the nucleation layer, wherein an oxygen content of the nucleation layer is more than 1019 cm−3, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by the oxygen content of the nucleation layer.

A method for producing an electronic semiconductor chip, the method comprising:

• providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region;
• directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface;
• growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence comprises selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on the whole surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region;
• and
• directly applying a nucleation layer of oxygen-containing AlN in such a way that the entire growth surface, the entire planar region and the surface structures are covered by the nucleation layer, wherein an oxygen content of the nucleation layer is more than 1019 cm−3, and wherein the oxygen content of the nucleation layer is adjusted in such a way that the semiconductor layer sequence is predominantly grown from the planar region, whereas very little or no growth at all of the semiconductor layer sequence takes place on the three-dimensional surface structures.