Multi-junction solar cell
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Bahman Hekmatshoartabari, Davood Shahrjerdi
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Abstract
A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.
Claims6
A multi-junction solar cell comprising:
- a crystalline silicon solar cell having an n-doped region and a silicon p-doped region, wherein:
- the n-doped region is at a front surface of the crystalline solar cell, and
- the silicon p-doped region is at a back surface of the crystalline solar cell;
- a crystalline germanium solar cell having a germanium n+ layer and a germanium p-doped layer, wherein:
- the germanium n+ layer is at a front surface of the crystalline germanium solar cell, and
- the germanium p-doped layer is at a back surface of the crystalline germanium solar cell;
- a p+ silicon layer formed on the back surface of the crystalline germanium solar cell;
- a tunnel junction between the crystalline silicon solar cell and the crystalline germanium solar cell;
- an SiO2 layer connected to a back surface of the p+ silicon layer;
- and
- a monolithic circuit connected through the SiO2 layer to the germanium n+ layer, the monolithic circuit including at least one transistor connected to the SiO2 layer.
Dependencies are inferred from the claim text.