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US 10,312,388 B2Granted
Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
AssigneesMicron Technology, Inc., Massachusetts Institute of Technology
InventorsRoy Meade, Karan Mehta, Efraim Megged, Jason Orcutt, Milos Popovic, Rajeev Ram, Jeffrey Shainline, Zvi Sternberg, Vladimir Stojanovic, Ofer Tehar-Zahav
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Abstract
Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.
Claims8
A method of forming an integrated structure, the method comprising:
- forming an optical isolation region in a substrate;
- forming a first polysilicon material over the substrate and optical isolation region;
- removing a portion of the first polysilicon material in a region which is over and vertically aligned with the optical isolation region;
- forming a second polysilicon material in the region over and vertically aligned with the optical isolation region;
- and
- patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
- wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.
4 more elements
A method of forming an integrated structure, the method comprising:
- forming an optical isolation region in a substrate;
- forming a first polysilicon material over the substrate, including over a region above and vertically aligned with an optical isolation region;
- implanting the region of the first polysilicon material above and vertically aligned with the optical isolation region with silicon to create an amorphous silicon region;
- annealing the implanted region to create a second polysilicon material;
- and
- patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
- wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.
4 more elements
Dependencies are inferred from the claim text.