Semiconductor diode and electronic circuit arrangement herewith

A volume-conductive semiconductor diode, comprising:

• a semiconductor body, the semiconductor body comprising:
• a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area of said first main area, providing a current path extending through the semiconductor body contacting a surface of the first contact layer and a surface of a second contact layer, wherein the second contact layer is arranged on a second main area situated opposite the first main area;
• a pn junction;
• wherein the volume-conductive semiconductor diode is configured to, upon a current flow through said current path, defines a partial current path formed by a further partial area of the inner area, have a greater heating per unit volume during a use as compared to when it is not used;
• wherein said further partial area of the inner area of the volume-conductive semiconductor diode is not arranged in an inner partial area defined as surrounding and proximate a central position of said semiconductor body;
• and
• wherein the inner partial area has a partial area contour which is formed to include at least a first shape selected from the group consisting of:
• round, square, and substantially similar to outer contour of the volume-conductive semiconductor diode.