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US 10,312,379 B2Granted
High voltage device
AssigneeUnited Microelectronics Corp.
InventorsShih-Yin Hsiao, Kai-Kuen Chang, Ching-Chung Yang
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Abstract
A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well.
Claims18
A high voltage device, comprising:
- a semiconductor substrate having a first conductivity type;
- a first ion well having a second conductivity type;
- a Schottky diode disposed in the first ion well;
- an isolation structure in the first ion well and surrounding the Schottky diode;
- and
- an assistant gate disposed only on the isolation structure and surrounding the Schottky diode, wherein the assistant gate is electrically connected to the Schottky diode by the assistant gate connected to a first contact element, the first contact element connected to an interconnection, the interconnection connected to a second contact element, and the second contact element connected to the Schottky diode.
3 more elements
A layout structure of a high voltage device, comprising:
- a semiconductor substrate having a first conductivity type;
- a first ion well having a second conductivity type;
- a Schottky diode disposed in the first ion well;
- an annular isolation structure in the first ion well and surrounding the Schottky diode;
- and
- an annular assistant gate disposed only on the annular isolation structure and surrounding the Schottky diode, wherein the annular assistant gate is electrically connected to the Schottky diode.
3 more elements
Dependencies are inferred from the claim text.