Production method of field-effect transistor, production method of array substrate, field-effect transistor, array substrate, and display panel

A production method of a

• field-effect transistor, comprising the steps of:
• forming an active layer on a substrate;
• forming a gate electrode insulating layer on the active layer to define a gate electrode area as well as a source electrode area and a drain electrode area located on two sides of the gate electrode area on the active layer;
• applying a gate electrode layer to cover surfaces of the active layer and the gate electrode insulating layer;
• and
• patterning the gate electrode layer to form a first contact electrode, a second contact electrode, and a gate electrode, wherein the first contact electrode is located on the source electrode area, the second contact electrode is located on the drain electrode area, and the gate electrode is located on the gate electrode insulating layer, and
• providing an intermediate layer on the patterned gate electrode layer, wherein the intermediate layer also covers exposed surfaces of the substrate and the active layer,
• wherein providing the intermediate layer further comprises a step of patterning the intermediate layer to form a first through hole and a second through hole in the intermediate layer, wherein the first through hole is aligned with the first contact electrode, and the second through hole is aligned with the second contact electrode.