Semiconductor Fin FET device with epitaxial source/drain

A semiconductor device, comprising:

• a substrate;
• a first fin structure disposed over the substrate and including a first channel region and a first source/drain region;
• a second fin structure disposed over the substrate and including a second channel region and a second source/drain region;
• a gate structure disposed over at least a portion of the first fin structure and the second fin structure, the first and second channel regions being beneath the gate structure and the first and second source/drain regions being outside of the gate structure;
• a first strain material layer disposed over the first source/drain region and a second strain material layer disposed over the second source/drain region, the first and second strain material layers providing stress to the first and second channel regions, respectively;
• a contact layer disposed over the first and second strain material layers;
• and
• an insulating layer separating the gate structure and the contact layer,
• wherein the first and second fin structures further include mask layers under the insulating layer, respectively, and do not have the mask layers in the first and second channel regions and the first and second source/drain regions.

A semiconductor device, comprising:

• a substrate;
• a fin structure disposed over the substrate and including a channel region and a source/drain region;
• a gate structure disposed over at least a portion of the fin structure, the channel region being beneath the gate structure and the source/drain region being outside of the gate structure;
• a strain material layer disposed over the source/drain region, the strain material layer providing stress to the channel region;
• a contact layer disposed over the strain material layer;
• and
• an insulating layer separating the gate structure and the contact layer,
• wherein the fin structure further includes a mask layer under the insulating layer and does not have the mask layer in the channel region and the source/drain region.