Laterally diffused MOSFET on fully depleted SOI having low on-resistance

A method of creating a laterally diffused MOSFET, comprising:

• disposing a first semiconductor layer on a first substrate;
• disposing a buried oxide layer on the first semiconductor layer;
• disposing a second semiconductor layer on the buried oxide layer;
• disposing a first gate region, a drain region, and a source region in the second semiconductor layer, wherein the first gate region is positioned between the source and the drain regions;
• disposing a first shallow trench isolation between the drain region at a first end of the second semiconductor layer and the first semiconductor layer;
• etching a section of the buried oxide layer next to the first shallow trench isolation and farther from the drain region to create an exposed region on the first semiconductor layer;
• disposing a second gate region on the exposed region of the first semiconductor layer between the first shallow trench isolation and a second shallow trench isolation;
• and
• coupling a gate node to the first gate region and the second gate region.

A method of operating a laterally diffused n-type MOSFET, the laterally diffused n-type MOSFET including a first gate region, a second gate region, a source region, and a drain region, the method comprising:

• applying a positive gate voltage above a predetermined threshold voltage to the first gate region and the second gate region, wherein the second gate region is disposed on an exposed region of a first semiconductor layer between a first shallow trench isolation and a second shallow trench isolation, the first shallow trench isolation being between the drain region at a first end of a second semiconductor layer and the first semiconductor layer disposed beneath the second semiconductor layer;
• generating an inversion layer in the first gate region based on the applied gate voltage to the first gate region;
• generating a back bias based on the applied gate voltage to the second gate region;
• and
• generating a current flow from the drain region to the source region, wherein the current flow is generated based at least on the inversion layer and the back bias.