Semiconductor device having improved edge trench, source electrode and gate electrode structures

A semiconductor device, comprising:

• a device region comprising one or more active trenches, each having a first gate electrode and a first source electrode separated from each other in a depth direction of the one or more active trenches;
• and
• a field termination region comprising an edge trench having a second gate electrode and a second source electrode separated from each other in a depth direction of the edge trench, wherein
• a first depth of the edge trench is larger than a second depth of the one or more active trenches,
• a thickness of a first insulation layer between the second gate electrode and an epitaxial layer in the edge trench is larger than a thickness of a second insulation layer between the first gate electrode and the epitaxial layer in the one or more active trenches, and
• in a cross-sectional view, the second gate electrode is laterally offset from the second source electrode in the depth direction of the edge trench such that the second gate electrode and the second source electrode do not overlap in the depth direction.