Method for making thin film transistor

A method of making a thin film transistor, the method comprising:

• providing a gate electrode on a substrate, forming a gate insulating layer on a surface of the gate electrode;
• placing a semiconductor layer on the gate insulating layer;
• locating a first photoresist layer, a nanowire structure, and a second photoresist layer on the semiconductor layer, and the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises one nanowire;
• forming one opening in the first photoresist layer and the second photoresist layer to expose a portion of the surface of the semiconductor layer to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer;
• and
• depositing a conductive film layer on the exposed surface of the semiconductor layer using the nanowire structure as a mask, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, and the conductive film layer is divided into two regions by the nano-scaled channel, one region is used as a source electrode, and the other region is used as a drain electrode.