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US 10,312,353 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Yu-Cheng Tung
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Abstract
A method for fabricating a semiconductor structure is provided in the present invention. The method includes the steps of forming a plurality of fins in a first region, a second region and a dummy region, forming a first solid-state dopant source layer and a first insulating buffer layer in the first region, forming a second solid-state dopant source layer and a second insulating buffer layer in the second region and the dummy region, and performing an etch process to cut the fin in the dummy region.
Claims9
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a first region, a second region and a dummy region;
- forming a plurality of fins in the first region, the second region and the dummy region;
- forming a first solid-state dopant source layer in the first region;
- forming a first insulating buffer layer on the first solid-state dopant source layer;
- forming a second solid-state dopant source layer in the second region and the dummy region;
- forming a second insulating buffer layer on the second solid-state dopant source layer and on the first insulating buffer layer;
- and
- performing an etch process to cut the fin in the dummy region to form a dummy fin.
5 more elements
Dependencies are inferred from the claim text.