Sloped finFET with methods of forming same
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a semiconductor fin; a gate dielectric positioned above a first region of the semiconductor fin; a spacer positioned above a second region of the semiconductor fin and adjacent to the gate dielectric; and a source/drain region contacting a third region of the semiconductor fin; wherein the first region of the semiconductor fin includes substantially vertical sidewalls, and the third region of the semiconductor fin includes sloped sidewalls.
Claims20
A method of forming an integrated circuit (IC) structure, the method comprising:
- forming a sacrificial gate on a semiconductor fin;
- forming a first spacer on the semiconductor fin, the first spacer positioned circumferentially about the sacrificial gate;
- forming a second spacer on the semiconductor fin, the second spacer positioned circumferentially about the first spacer;
- and
- tapering an exposed portion of the semiconductor fin to form sloped sidewalls thereon, the exposed portion of the semiconductor fin positioned adjacent the sacrificial gate, the first spacer, and the second spacer.
A method of forming an integrated circuit (IC) structure, the method comprising:
- forming a sacrificial gate on a semiconductor fin;
- forming a first spacer on the semiconductor fin, the first spacer positioned circumferentially about the sacrificial gate;
- forming a second spacer on the semiconductor fin, the second spacer positioned circumferentially about the first spacer;
- tapering an exposed portion of the semiconductor fin to form sloped sidewalls thereon, the exposed portion of the semiconductor fin positioned adjacent the sacrificial gate, the first spacer, and the second spacer;
- and
- forming one of a source contact and a drain contact on the sloped sidewalls of the semiconductor fin.
Dependencies are inferred from the claim text.