Integrated circuit device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHa-jin Lim, Gi-gwan Park, Weon-hong Kim
Life of this patent
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Abstract
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.
Claims17
A method of manufacturing an integrated circuit device, the method comprising:
- forming a first dielectric layer on a substrate in a first area and a second dielectric layer on the substrate in a second area;
- forming a metal containing layer covering the first dielectric layer in the first area and the second dielectric layer in the second area;
- and
- oxidizing at least a part of the metal containing layer in the second area while covering the metal containing layer in the first area to prevent oxidization of the metal containing layer in the first area by a mask pattern.
A method of manufacturing an integrated circuit device, the method comprising:
- forming a first dielectric layer on a substrate in a first area and a second dielectric layer on the substrate in a second area;
- forming a metal containing layer covering the first dielectric layer in the first area and the second dielectric layer in the second area;
- forming an oxygen containing conductive layer in the second area by supplying oxygen atoms to the metal containing layer in the second area, the oxygen containing conductive layer having a higher oxygen content than an oxygen content of the metal containing layer in the first area;
- and
- forming a first upper gate layer on the metal containing layer in the first area and a second upper gate layer on the oxygen containing conductive layer in the second area,
- wherein the metal containing layer in the first area is covered by a mask pattern while the oxygen atoms are supplied to the metal containing layer in the second area.
A method of manufacturing an integrated circuit device, the method comprising:
- forming a first dielectric layer on a substrate in a first area and a second dielectric layer on the substrate in a second area;
- and
- forming a first metal containing structure covering the first dielectric layer in the first area and a second metal containing structure covering the second dielectric layer in the second area,
- wherein the forming of the first metal containing structure and the second metal containing structure comprises:
- forming a metal containing layer covering the first dielectric layer in the first area and the second dielectric layer in the second area;
- and
- exposing at least a part of the metal containing layer in the second area to an oxidization atmosphere while covering another part of the metal containing layer in the first area by a mask pattern, and
- wherein the first metal containing structure has a first oxygen content and the second metal containing structure has a second oxygen content that is greater than the first oxygen content.
Dependencies are inferred from the claim text.