Fabrication of nano-sheet transistors with different threshold voltages

A method of forming two or more nano-sheet devices with varying channel lengths, comprising:

• forming a channel stack including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate;
• forming at least two cut-stacks from the channel stack, where each of the at least two cut-stacks includes a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer;
• removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers;
• forming an indentation fill layer in the indentations;
• forming a mask on at least one of the two or more cut-stacks;
• and
• removing a portion of the at least one alternating nano-sheet channel layer to form a recess in the unmasked cut-stacks.

A method of forming two or more nano-sheet devices with varying channel lengths, comprising:

• forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate;
• removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers;
• and
• removing a portion of the at least one alternating nano-sheet channel layer to form a recess having a recess depth in the at least one alternating nano-sheet channel layer, wherein the one of the two or more nano-sheet devices has a different threshold voltage, VT, than the other of the two or more nano-sheet devices by altering the length of the at least one alternating nano-sheet channel layer.