Fin-type semiconductor device
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorsXinyun Xie, Ming Zhou
Life of this patent
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Abstract
Fin-type semiconductor device is provided. The semiconductor device includes: a semiconductor substrate and an insulating layer on sidewalls of the plurality of fins. A plurality of fins is projected on a surface of the semiconductor substrate. The insulating layer is located on the surface of the semiconductor substrate. A surface of the insulating layer is lower than top surfaces of the plurality of fins. A thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate, a bottom portion of each of the plurality of fins has concave sidewalls, and a width of the bottom portion of each of the plurality of fins is smaller than a width of a top portion of each of the plurality of fins;
- and
- an insulating layer on sidewalls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a top surface of the insulating layer is lower than top surfaces of the plurality of fins and higher than bottom portion of each of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.
Dependencies are inferred from the claim text.