Trigate device with full silicided epi-less source/drain for high density access transistor applications

A semiconductor structure comprising:

• a deep trench capacitor embedded in a substrate;
• a conductive strap structure in contact with, and overlying, an entirety of a topmost surface of an inner electrode of the deep trench capacitor, wherein the conductive strap structure comprises, from bottom to top, a base portion composed of a conductive material, and a fin portion composed of a doped metal semiconductor alloy;
• and
• an access transistor comprising:
• a semiconductor fin located on the substrate and laterally adjacent to the fin portion of the conductive strap structure,
• a gate stack overlying a body region of the semiconductor fin,
• source/drain regions located in portions of the semiconductor fin and laterally surrounding the body region, wherein an entirety of each of the source/drain regions is alloyed with a metal, and
• a segregated interfacial dopant layer located at an interface between each of the source/drain regions and the body region, wherein the fin portion of the conductive strap structure, the source/drain regions, the segregated interfacial dopant layer and the body region of the semiconductor fin have topmost surfaces that are coplanar with each other.