Metal-insulator-metal capacitor structure

A method comprising:

• forming at least one gate structure;
• removing a material from the at least one gate structure to form a trench;
• recessing an insulator material formed outside of the trench to form a ledge;
• depositing a capacitor material within the trench and at edges of the trench;
• etching the capacitor material to form a stepped feature having a plurality of steps at each of the edges of and inside the trench;
• forming a first contact within the trench and in contact with a first conductive material of the capacitor material;
• forming a second contact in contact with a second conductive material of the capacitor material at least partially outside of the trench by forming a contact trench in the insulator material to expose the capacitor material and filling the contact trench with a metal material;
• and
• forming a capping material on top of the capacitor material,
• wherein:
• the first conductive material is a top electrode plate,
• the second conductive material is a bottom electrode plate,
• the bottom electrode plate is deposited on the ledge to increase surface contact area and forms a top step of the stepped feature at each of the edges of the trench,
• the first contact is formed through the capping material and in direct contact with the top electrode plate within the trench,
• the second contact is formed in direct contact with the top step of the stepped feature at each of the edges of the trench, and
• the capping material comprises a low-k dielectric material and is formed to have a stepped configuration at each of the edges of the trench.