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US 10,312,312 B2Granted
Display device having LTPS and oxide TFTs integrated on the same substrate
AssigneeLG Display Co., Ltd.
InventorsEui Tae Kim, Bu Yeol Lee
Life of this patent
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Abstract
Provided is a display device. A poly-Si layer is disposed on a substrate. A first metal layer is disposed on the poly-Si layer, and a metal oxide layer is disposed on the first metal layer. A second metal layer is disposed on the metal oxide layer. The first metal layer is overlapped with the second metal layer. The first metal layer and the second metal layer may be gate lines connected to different TFTs.
Claims14
A display device comprising:
- a substrate;
- a polycrystalline silicon (poly-Si) layer on the substrate;
- a first metal layer on the poly-Si layer;
- a metal oxide layer on the first metal layer;
- a second metal layer disposed on the metal oxide layer and overlapped with the first metal layer;
- a capacitor in which a first sub-capacitor, a second sub-capacitor, and third sub-capacitor are connected in parallel to each other, two terminals of the first sub-capacitor are the poly-Si layer and the first metal layer, two terminals of the second sub-capacitor are the first metal layer and the metal oxide layer, and two terminals of the third sub-capacitor are the metal oxide layer and the second metal layer;
- and
- a first thin-film-transistor (TFT) and a second TFT are disposed in a pixel defined on the substrate,
- wherein the poly-Si layer is an active layer of the first TFT, and the metal oxide layer is an active layer of the second TFT connected to the second metal layer, and
- wherein the capacitor is provided in the pixel defined on the substrate.
7 more elements
Dependencies are inferred from the claim text.