Organic light-emitting diode, display panel and display device

A display panel, comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers;

• wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material doped with a P-type semiconductor material, and wherein the second layer unit comprises an electron transport material doped with ytterbium, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%;
• wherein the P-type semiconductor material comprises the following compound:
• wherein n is an integer greater than or equal to 1, X1, X2 and X3 each respectively has an independent structure of
• R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group.

A display device, comprising a display panel, the display panel comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers;

• wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material and a P-type semiconductor material doped in the hole injection material, and wherein the second layer unit comprises an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%;
• wherein the P-type semiconductor material comprises the following compound:
• wherein n is an integer greater than or equal to 1, X1, X2 and X3 each has an independent structure of
• R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group.