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US 10,312,292 B2Granted
X-ray detector
AssigneesRayence Co., Ltd., VATECH EWOO Holdings Co., Ltd.
InventorsSung Kyn Heo, Dong Hui Shin, Tae Woo Kim, Min Seok Yun
Life of this patent
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Abstract
Disclosed is a direct-conversion-type X-ray detector, including a first electrode on a substrate, a semiconductor structure including a photoconductor using a perovskite material on the first electrode, and a second electrode on the semiconductor structure.
Claims16
An X-ray detector, comprising:
- a first electrode on a substrate;
- a semiconductor structure including a photoconductor using a perovskite material on the first electrode;
- and
- a second electrode on the semiconductor structure,
- wherein the substrate is a CMOS substrate or a plastic substrate, and an adhesive polymer formed between the first electrode and the photoconductor is further included.
2 more elements
Dependencies are inferred from the claim text.