Front side illuminated image sensor device structure and method for forming the same

A front side illuminated (FSI) image sensor device structure, comprising:

• a pixel region formed in a substrate;
• a storage region formed in the substrate and adjacent to the pixel region;
• a storage gate structure formed on the storage region;
• a floating node region formed in the substrate and adjacent to the storage region;
• a metal shield structure formed on the storage region, wherein the metal shield structure has a first height measured from a top surface of the substrate to a top surface of the metal shield structure;
• and
• a conductive structure between the storage region and the floating node region,
• wherein the conductive structure has a second height measured from the top surface of the substrate to a top surface of the conductive structure, the metal shield structure is electrically connected to the conductive structure and the second height is smaller than the first height, and a top surface of the storage gate structure is higher than a top surface of the conductive structure, and wherein a bottom surface of the conductive structure is substantially level with a bottom surface of the metal shield structure, and
• wherein the conductive structure is electrically connected to the metal shield structure through a via.

A front side illuminated (FSI) image sensor device structure, comprising:

• a pixel region formed in a substrate;
• a storage region formed in the substrate and adjacent to the pixel region;
• a storage gate structure formed on the storage region;
• a metal shield structure formed on the storage gate structure, wherein the metal shield structure comprises a top portion on a top surface of the storage gate structure and a sidewall portion on sidewall surfaces of the storage gate structure;
• and
• a conductive structure formed on the substrate and adjacent to the storage region,
• wherein the conductive structure is electrically connected to the metal shield structure through a via, and the conductive structure and the pixel region are on opposite sides of the storage gate structure, and wherein the sidewall portion of the metal shield structure is between the storage gate structure and the conductive structure.