Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first layer;
• a first semiconductor layer on the first layer;
• a stacked body on the first semiconductor layer, the stacked body including a plurality of electrode layers spaced apart in a first direction;
• a first insulating layer extending inwardly of the stacked body in the first direction and extending past at least a portion of the electrode layers;
• and
• a second semiconductor layer electrically connected to the first semiconductor layer and extending inwardly of the stacked body in the first direction, wherein the first insulating layer extends between the second semiconductor layer and adjacent electrode layers in the stacked body, wherein
• a plurality of memory cells are located at the interface of the individual electrode layers with the adjacent portions of the first insulating layer and the second semiconductor layer, the plurality of memory cells including a first memory cell and a second memory cell farther from the first layer than the second memory cell;
• a first portion of the second semiconductor layer that is adjacent the first memory cell includes a single crystal and a second portion of the second semiconductor layer that is adjacent the second memory cell includes a single crystal;
• and
• an average crystal grain size in the first portion of the second semiconductor layer is larger than in the second portion of the second semiconductor layer.