Semiconductor device and method for manufacturing same

A semiconductor device, comprising:

• a substrate;
• a stacked body provided above the substrate, the stacked body including a plurality of electrode layers stacked with a first air gap interposed;
• a semiconductor film extending in a stacking direction through the stacked body;
• a plurality of charge storage films provided between the semiconductor film and the electrode layers, the plurality of charge storage films being separated in the stacking direction with a second air gap interposed;
• and
• a plurality of insulating films provided on side surfaces of the electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing the first air gap, and on corners of the electrode layers between the portions and the side surfaces, the plurality of insulating films being divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed, the third air gap communicating with the first air gap and the second air gap between the first air gap and the second air gap.