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US 10,312,251 B2Granted
Semiconductor memory device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorTakeshi Sonehara
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Abstract
A semiconductor memory device according to an embodiment includes a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction, a semiconductor member extending in the first direction and piercing the stacked body, and a charge storage member provided between the semiconductor member and the electrode film. The electrode film includes a first portion. The first portion is composed of a metal silicide. The first portion surrounds the semiconductor member as viewed from the first direction.
Claims12
A semiconductor memory device, comprising:
- a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction;
- a semiconductor member extending in the first direction and piercing the stacked body;
- and
- a charge storage member provided between the semiconductor member and the electrode film,
- the electrode film including a first portion and a second portion, the first portion surrounding the semiconductor member as viewed from the first direction and the second portion surrounding the first portion, the first portion being provided between the semiconductor member and the second portion, the second portion having a first material selected from silicon, germanium, or carbon, the second portion not having a metal silicide, the first portion having a metal silicide including the first material.
2 more elements
Dependencies are inferred from the claim text.