Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• providing a substrate comprising a memory region and a logic region;
• forming a plurality of isolation structures in the substrate in the memory region and the logic region;
• forming a pad oxide layer on the substrate in the memory region and the logic region;
• removing the pad oxide layer in the memory region to recess the isolation structures, such that a plurality of portions of the substrate in the memory region is protruded beyond the isolation structures to form a plurality of semiconductor fins;
• forming a charge storage layer to cover the semiconductor fins;
• and
• forming a control gate disposed across the semiconductor fins and the isolation structures, such that the charge storage layer is disposed between the control gate and the semiconductor fins;
• forming a select gate structure on the substrate in the logic region and across the substrate and the isolation structures;
• and
• forming a doped region in the substrate between the select gate structure and the control gate after the select gate structure is formed, wherein the select gate structure and the control gate share the doped region.