Method for forming a semiconductor device

A method for forming a semiconductor device, comprising:

• providing a substrate having a first area comprising first semiconductor structures and a second area, wherein one of the first semiconductor structures comprises a memory gate made of a first polysilicon layer, and a second semiconductor structure comprising a second polysilicon layer disposed within the second area on the substrate;
• forming an organic material layer on the first semiconductor structures within the first area and on the second polysilicon layer within the second area;
• patterning the organic material layer to form a patterned organic material layer, and the patterned organic material layer exposing the memory gates of the first semiconductor structures, wherein a first pre-determined region and a second pre-determined region at the substrate are covered by the patterned organic material layer;
• forming a patterned photo-resist layer on the patterned organic material layer;
• and
• implanting the first polysilicon layer and the second polysilicon layer simultaneously.