Semiconductor memory including semiconductor oxie

A semiconductor memory comprising:

• a first interconnect;
• a second interconnect;
• a member extending in a first direction and including an oxide semiconductor layer, the first direction being parallel to a direction from the first interconnect to the second interconnect, a first end of the oxide semiconductor layer in the first direction electrically connected to the second interconnect, and a second end of the oxide semiconductor layer in the first direction electrically disconnected from the first interconnect, the oxide semiconductor layer including a first portion, second portion and third portion arranged in order from the second end to the first end;
• first, second and third conductive layers disposed along the first direction, the first conductive layer facing the first portion, the second conductive layer facing the second portion, and the third conductive layer facing the third portion;
• a memory cell provided in a first region including the first portion, the memory cell including a charge storage layer in the first portion;
• a first transistor provided in a second region including the second portion;
• and
• a second transistor provided in a third region including the third portion.