Method of forming fin shape structure having different buffer layers

A method of forming a fin shaped structure, comprising:

• providing a substrate having a first fin structure and a second fin structure;
• forming an insulation material layer on the substrate;
• removing a portion of the first fin structure, to form a first recess in the insulation material layer, while the second fin structure remained covered by a first patterned mask layer;
• forming a first buffer layer in the first recess;
• forming a first channel layer in the first recess on the first buffer layer;
• removing a portion of the second fin structure, to form a second recess in the insulation material layer, while the first fin structure remained covered by a second patterned mask layer;
• forming a second buffer layer in the second recess, wherein while the first buffer layer comprises group III-V semiconductor material, the second buffer layer comprises group IV semiconductor material, and the first channel layer comprises a same material as that of the first buffer layer, and the first buffer layer and the second buffer layer are different in conductive type;
• and
• forming a second channel layer in the second recess on the second buffer layer, wherein the second channel layer comprises a different material from that of the first channel layer.