Diode connected vertical transistor

An electrical device comprising:

• a semiconductor substrate including an electrically conductive surface region;
• and
• a diode connected transistor device comprising a second vertically orientated channel present on the semiconductor substrate, the diode connected transistor device further including a first diode source/drain region provided by the electrically conductive surface region at a first end of the diode vertically orientated channel, a diode gate structure in electrical contact with the first diode source/drain region, and a second diode source/drain at a second end of the diode vertically orientated channel, wherein a gate electrode of the gate structure is in direct contact with the first diode source/drain region.