Power semiconductor module

A power semiconductor module comprising:

• at least three core modules in which first element pairs formed by connecting diode elements and switching elements in antiparallel and second element pairs formed by connecting diode elements and switching elements in antiparallel are connected in series and the first element pairs and the second element pairs are sealed by resin;
• and
• a cover with terminals including a direct-current positive electrode terminal, a direct-current negative electrode terminal, a direct-current midpoint terminal, and an alternating-current terminal, wherein
• in the core modules, first electrodes electrically connected to positive-side electrodes of the switching elements configuring the first element pairs, second electrodes electrically connected to negative-side electrodes of the switching elements configuring the first element pairs, third electrodes electrically connected to positive-side electrodes of the switching elements configuring the second element pairs, and fourth electrodes electrically connected to negative-side electrodes of the switching elements configuring the second element pairs are exposed to a surface,
• the direct-current positive electrode terminal of the cover with terminals is electrically connected to the first electrode provided in a first core module among the at least three core modules,
• the direct-current negative-electrode terminal of the cover with terminals is electrically connected to the fourth electrode provided in a second core module among the at least three core modules,
• the direct-current midpoint terminal of the cover with terminals is electrically connected to the fourth electrode provided in the first core module and the first electrode provided in the second core module, and
• the alternating-current terminal of the cover with terminals is electrically connected to the second electrode and the third electrode provided in a third core module among the at least three core modules.