Semiconductor devices comprising protected side surfaces and related methods

A method, comprising:

• cutting partially through a thickness of a semiconductor wafer to form trenches of a first width between regions of integrated circuitry of the semiconductor wafer, each region configured to bear a corresponding stack of semiconductor dice thereon each region configured of integrated circuitry configured to operate as logic circuitry;
• positioning a stack of semiconductor dice comprising memory dice on a surface of each region after forming the trenches, leaving a peripheral portion of the surface of each region exposed;
• dispensing a protective material only into the trenches, over the exposed peripheral portions of the regions of integrated circuitry, and to a level no higher than a height of the stacks of semiconductor dice to leave bond pads located on the semiconductor die farthest from the semiconductor dice of the stack proximate the semiconductor wafer exposed;
• removing material of the semiconductor wafer from a back side thereof at least to a depth sufficient to expose the protective material in the trenches at the back side surface of the semiconductor wafer;
• connecting electrically conductive elements to at least some of the exposed bond pads located on a semiconductor die farthest from a semiconductor die of the stack proximate the semiconductor wafer;
• and
• cutting through a remaining thickness of the protective material between the stacks of semiconductor dice and within the trenches by making cuts of a second, narrower width from the semiconductor dice of the stacks farthest from the semiconductor wafer through the protective material to form semiconductor devices having the protective material on sides of the semiconductor dice of the stacks of semiconductor dice and on side surfaces of the regions within the trenches.