Array substrate

An array substrate, comprising:

• a device array;
• a bonding pad located in a bonding area and electrically connected to the device array;
• at least one support structure, wherein a first horizontal distance between the at least one support structure and the bonding pad is between 5 μm and 1000 μm;
• a first substrate;
• a first insulation layer located on the first substrate;
• and
• a second insulation layer located on the first insulation layer, wherein at least a portion of the at least one support structure is embedded in the second insulation layer, a first vertical distance formed between the at least one support structure and an upper surface of the first insulation layer is greater than 0 μm, the at least one support structure comprises a first portion and a second portion made of different materials, a material of the first portion of the at least one support structure comprises metal oxide, the second portion is located between the first insulation layer and the first portion, and a material of the second portion of the at least one support structure comprises metal.

An array substrate, comprising:

• a device array;
• a bonding pad located in a bonding area and electrically connected to the device array;
• at least one support structure, wherein a first horizontal distance between the at least one support structure and the bonding pad is between 5 μm and 1000 μm;
• a first substrate;
• a first insulation layer located on the first substrate;
• and
• a second insulation layer located on the first insulation layer, wherein at least a portion of the at least one support structure is embedded in the second insulation layer, a first vertical distance formed between the at least one support structure and an upper surface of the first insulation layer is greater than 0 μm, the at least one support structure comprises a first portion and a second portion made of different materials, a material of the first portion of the at least one support structure comprises metal oxide, the second portion is located in the first portion, the second portion is not in contact with the first insulation layer, and a material of the second portion comprises an insulation material, wherein the insulation material comprises silicon nitride, silicon oxide, or polymethylmethaciylate (PMMA).

An array substrate, comprising:

• a device array;
• a bonding pad located in a bonding area and electrically connected to the device array;
• at least one support structure, wherein a first horizontal distance between the at least one support structure and the bonding pad is between 5 μm and 1000 μm;
• a first substrate;
• a first insulation layer located on the first substrate;
• a second insulation layer located on the first insulation layer, wherein at least a portion of the at least one support structure is embedded in the second insulation layer, a first vertical distance is formed between the at least one support structure and a lower surface of the first insulation layer, the first vertical distance is between 0 μm and 1 μm;
• and
• a first conductive layer extending from the bonding area towards the device array, a portion of the first conductive layer located in the bonding area being embedded into the first insulation layer, a second vertical distance being formed between the portion of the first conductive layer and a lower surface of the first insulation layer, and the second vertical distance being between 0 μm and 1 μm.

An array substrate, comprising:

• a device array;
• a bonding pad located in a bonding area and electrically connected to the device array;
• at least one support structure, wherein a first horizontal distance between the at least one support structure and the bonding pad is between 5 μm and 1000 μm;
• a first substrate;
• a first insulation layer located on the first substrate;
• a second insulation layer located on the first insulation layer, wherein at least a portion of the at least one support structure is embedded in the second insulation layer, a first vertical distance is formed between the at least one support structure and a lower surface of the first insulation layer, the first vertical distance is between 0 μm and 1 μm;
• and
• a first conductive layer extending from the bonding area towards the device may, a second vertical distance being formed between a portion of the first conductive layer not being located in the bonding area and an upper surface of the first insulation layer, a third vertical distance being formed between the at least one support structure and the upper surface of the first insulation layer, the third vertical distance being less than or equal to the second vertical distance, and the at least one support structure and the portion of the first conductive layer not being located in the bonding area belonging to a same film layer.