Zero capacitance electrostatic discharge devices
AssigneeTexas Instruments Incorporated
InventorHe Lin
Life of this patent
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Abstract
In some examples, an electrostatic discharge (ESD) device includes a substrate layer, a transition layer positioned on the substrate layer, a plurality of superlattice layers on the transition layer and including at least two doped superlattice layers. The ESD device further includes a plurality of doped contact structures extending from the transition layer to a surface of an outermost layer of the plurality of superlattice layers, where a first of the plurality of doped contact structures comprises an anode and a second of the plurality of doped contact structures comprises a cathode, where the plurality of doped contact structures are to generate a zero capacitance ESD device.
Claims7
A method of fabricating an electrostatic discharge (ESD) device, comprising:
- providing a substrate layer;
- depositing a transition layer on the substrate layer;
- growing a first intrinsic superlattice layer on the transition layer;
- growing a first-doped superlattice layer on the first intrinsic superlattice layer;
- growing a second intrinsic superlattice layer on the first-doped superlattice layer;
- growing a second-doped superlattice layer on the second intrinsic superlattice layer, wherein the second-doped superlattice layer has an outer surface;
- implanting a first contact structure extending from the outer surface of the second-doped superlattice layer to the transition layer;
- and
- implanting a second contact structure extending from the outer surface of the second-doped superlattice layer to the transition layer, wherein the first contact structure and the second contact structure are to receive a threshold voltage to generate a zero capacitance ESD device.
Dependencies are inferred from the claim text.