Enhancing integrated circuit density with active atomic reservoir

A method comprising:

• forming a first wiring layer in a dielectric layer, wherein the first wiring layer includes a first conductor electrically coupled with a second conductor, wherein the second conductor is orientated substantially perpendicular to the first conductor;
• forming a second wiring layer in the dielectric layer, wherein the second wiring layer includes a third conductor oriented substantially perpendicular to the first conductor;
• and
• forming a via layer in the dielectric layer between the first wiring layer and the second wiring layer, wherein the via layer includes a first via that electrically couples the second conductor to the first conductor and a second via that electrically couples the second conductor to the third conductor.

A method comprising:

• forming a first wiring layer in a dielectric layer, wherein the first wiring layer includes a first conductor electrically coupled with a second conductor;
• forming a second wiring layer in the dielectric layer, wherein the second wiring layer includes a third conductor;
• and
• forming a via layer in the dielectric layer between the first wiring layer and the second wiring layer, wherein the via layer includes a first via that electrically couples the third conductor to the first conductor and a second via that electrically couples the second conductor with a voltage that is different than a voltage electrically coupled with the first conductor.