Interconnect structure with method of forming the same

A method of forming an interconnect, the method comprising:

• forming a first dielectric layer above a substrate
• forming a first via in the first dielectric;
• forming a second dielectric layer above the first dielectric layer;
• forming a via opening in the second dielectric layer above the first via;
• forming a sacrificial semiconductor material in the via opening;
• forming a first layer on the second dielectric layer and the sacrificial semiconductor material;
• forming a third dielectric layer on the first layer;
• forming a wire opening in the third dielectric layer to expose a portion of the first layer, the wire opening positioned above the sacrificial semiconductor material;
• removing the exposed portion of the first layer to expose the sacrificial semiconductor material;
• removing the sacrificial semiconductor material from the via opening to expose an upper surface of the first via in the first dielectric layer;
• and
• forming a conductive material in the via opening and the wire opening to form the interconnect on the first via, the interconnect including a second via and a first wire.