Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus

A device comprising:

• a semiconductor substrate including a first face and a second face on a side opposite to the first face;
• an external connection terminal formed on the first face of the semiconductor substrate;
• a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal;
• a second electrode formed on the first face of the semiconductor substrate;
• an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face, and the integrated circuit being electrically connected to the first electrode and the second electrode;
• a rear face electrode formed on the second face of the semiconductor substrate;
• an electronic element formed above the second face of the semiconductor substrate, the electronic element being electrically connected to the rear face electrode;
• a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;
• an insulating film formed on side walls of the groove portion;
• and
• a conductive portion formed inside the groove portion on the insulating portion and electrically connected to the second electrode and the rear face electrode;
• wherein the external connection terminal, first electrode, the integrated circuit, the second electrode, the conductive portion, the rear face electrode and the electronic element are electrically connected in that order.

A device comprising:

• a semiconductor substrate including a first face and a second face on a side opposite to the first face;
• an external connection terminal formed on the first face of the semiconductor substrate;
• a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal;
• a second electrode formed on the first face of the semiconductor substrate;
• an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face, and the integrated circuit being electrically connected to the first electrode and the second electrode;
• an electronic element formed on the second face of the semiconductor substrate;
• a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;
• an insulating film formed on side walls of the groove portion;
• and
• a conductive portion formed inside the groove portion on the insulating portion and electrically connected to the second electrode and the electronic element;
• wherein the external connection terminal, first electrode, the integrated circuit, the second electrode, the conductive portion, the rear face electrode and the electronic element are electrically connected in that order;
• and
• wherein the semiconductor substrate is silicon.