Method of improving surface smoothness of dummy gate

Abstract

The present disclosure relates to the field of semiconductor technologies, and discloses a method for manufacturing a semiconductor apparatus. An implementation of the method may include: providing a substrate structure; depositing a dummy gate material layer on the substrate structure; performing planarization processing on the dummy gate material layer; after the planarization processing, performing, according to surface roughness of the dummy gate material layer, first etching on the dummy gate material layer by using a fluorine-containing gas; after the first etching, forming a fluorine-containing polymer layer on the dummy gate material layer; and performing second etching on the substrate structure on which the fluorine-containing polymer layer is formed, to remove the fluorine-containing polymer layer, where the second etching includes etching a surface of the dummy gate material layer. The method of the present invention improves surface smoothness and thickness uniformity of the dummy gate material layer.

Dependencies are inferred from the claim text.