FinFET device and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorYong Li
Life of this patent
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Abstract
A FinFET device and fabrication method thereof is provided. The fabrication method include: providing a semiconductor substrate with a fin protruding from the semiconductor substrate, and a gate structure across a length portion of the fin and covering a portion of the fin; etching a partial thickness of the fin on both sides of the gate structure to form grooves; forming a doped layer in a bottom and sidewalls of the grooves; annealing the doped layer to allow the doping ions to diffuse into the fin and to form a lightly doped source/drain region; removing the doped layer after the annealing; and forming epitaxial layers to fill up the grooves.
Claims19
A method for fabricating FinFET, comprising:
- providing a semiconductor substrate with a fin protruding from the semiconductor substrate, and a gate structure on the semiconductor substrate across a length portion of the fin and covering a portion of a top and sidewalls of the fin;
- forming a mask layer on the semiconductor substrate, the top and sidewalls of the fin on both sides of the gate structure;
- etching a partial thickness of the fin on both sides of the gate structure to form grooves;
- forming a doped layer with doping ions in a bottom and sidewalls of the grooves;
- annealing the doped layer to allow the doping ions to diffuse into the fin and to form lightly doped source/drain regions;
- removing the doped layer after the annealing;
- and
- forming epitaxial layers to fill up the grooves.
Dependencies are inferred from the claim text.