Semiconductor devices having FIN active regions
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungin Choi, Ah-Young Cheon, Kwang-Yong Yang, Myungil Kang, Dohyoung Kim, YoonHae Kim
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Abstract
Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.
Claims19
A method of forming a semiconductor device, comprising:
- forming sacrificial patterns on a substrate;
- forming an ion implanted region in the substrate between the sacrificial patterns;
- etching a portion of the substrate and the ion implanted region to form a recess region between the sacrificial patterns;
- forming a source/drain epitaxial layer in the recess region;
- forming active fins by etching the substrate before forming the sacrificial patterns, and
- replacing the sacrificial patterns by gate patterns after forming the source/drain epitaxial layer.
A method of forming a semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming sacrificial patterns on the substrate of the first region and the second region;
- forming an ion implanted region in the substrate between the sacrificial patterns at the second region;
- forming a first recess region by etching a portion of the substrate between the sacrificial patterns at the first region;
- forming a second recess region by etching another portion of the substrate and the ion implanted region at the second region;
- forming a first source/drain epitaxial layer in the first recess region;
- and
- forming a second source/drain epitaxial layer in the second recess region.
Dependencies are inferred from the claim text.