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US 10,312,143 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeToshiba Memory Corporation
InventorsTatsuo Migita, Koji Ogiso
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a metal member, and a metal oxide film. The semiconductor substrate is provided with a through-hole that passes through the semiconductor substrate from one surface to another surface opposite to the one surface. The metal member is provided in the through-hole, and includes a cavity therein defined by an internal surface. The metal oxide film coats the internal surface.
Claims10
A semiconductor device, comprising:
- a semiconductor substrate including a through-hole extending through the semiconductor substrate from a first surface to a second surface opposite the first surface;
- a metal member having a cavity therein defined by an internal surface of the metal member, the metal member being disposed in the through-hole;
- a metal oxide film coating the internal surface of the metal member;
- and
- a metal layer located in an opening of the through-hole formed in the second surface of the substrate, wherein
- the metal member protrudes from the opening of the through-hole beyond the metal layer.
3 more elements
A semiconductor device, comprising;
- a semiconductor substrate having a first surface and a second surface opposed to the first surface;
- a device layer at the first surface of the substrate;
- a wiring layer overlying the device layer;
- a via hole extending through the substrate between the first and second surfaces thereof, the device layer being at least partially exposed to an interior of the via hole;
- and
- a metal plug in the via hole and extending therethrough, the metal plug comprising:
- a metal body material,
- a cavity in the metal body material, the cavity having an internal surface, and
- a metal oxide film on the internal surface of the cavity between the metal body material and the cavity, wherein
- the metal plug protrudes from the via hole beyond the second surface of the semiconductor substrate.
7 more elements
Dependencies are inferred from the claim text.