Etch damage and ESL free dual damascene metal interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSunil Kumar Singh, Chung-Ju Lee, Tien-I Bao
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Abstract
Some embodiments relate to a semiconductor device manufacturing process. In the process, a substrate is provided, and a sacrificial layer is formed over the substrate. An opening is patterned through the sacrificial layer, and the opening is filled with conductive material. The sacrificial layer is removed while the conductive material is left in place. A first dielectric layer is formed along sidewalls of the conductive material that was left in place.
Claims20
A semiconductor device manufacturing process, comprising:
- providing a substrate;
- forming a sacrificial layer over the substrate;
- patterning an opening through the sacrificial layer;
- filling the opening with conductive material;
- removing the sacrificial layer while leaving the conductive material in place;
- forming a first dielectric layer along sidewalls of the conductive material left in place;
- and
- prior to forming the sacrificial layer over the substrate, forming a second dielectric layer over the substrate, wherein the sacrificial layer is formed over the second dielectric layer.
A semiconductor device manufacturing process, comprising:
- providing a substrate;
- forming a sacrificial layer over the substrate;
- removing a first selected portion of the sacrificial layer to form an opening in an upper portion of the sacrificial layer;
- filling the opening with conductive material to form a conductive feature;
- removing a remaining portion of the sacrificial layer while leaving the conductive feature in place;
- forming an upper dielectric layer along a sidewall of the conductive feature;
- and
- prior to forming the sacrificial layer over the substrate, forming a lower dielectric layer over the substrate, wherein the sacrificial layer is formed over the lower dielectric layer.
A semiconductor device manufacturing process, comprising:
- providing a substrate;
- forming a first dielectric layer over the substrate;
- after the first dielectric layer is formed over the substrate, forming a layer, which comprises polyimide (PI), polypropylene glycol (PPG), polybutadine (PB), polyethylene glycol (PEG), polycaprolactonediol (PCL), or amorphous carbon, over the first dielectric layer;
- patterning an opening through the layer;
- filling the opening with conductive material;
- removing the layer while leaving the conductive material in place;
- and
- forming a second dielectric layer along sidewalls of the conductive material left in place.
Dependencies are inferred from the claim text.