Protective tape and method for manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device comprising:

• a protective tape pasting step of pasting a protective tape having an adhesive agent layer to a wafer surface on which a bump is formed;
• a grinding step of grinding a surface of the wafer opposite to the side on which the protective tape is pasted;
• and
• a protective tape peeling step of peeling the protective tape so that the adhesive agent layer remains and other layers are removed,
• wherein the protective tape comprises, in the following order, the adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer, wherein conditions expressed by the following formulae (1) to (3) are satisfied,
• Ga>Gb (1)
• Ta<Tb (2)
• (Ga*Ta+Gb*Tb)/(Ta+Tb)≤1.4E+06 Pa (3)
• wherein, in formula (1), Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted and Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted, in formula (2), Ta represents a thickness of the first thermoplastic resin layer and Tb represents a thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb are the same as in formula (1) and Ta and Tb are the same as in formula (2).