Method for forming semiconductor structure using modified resist layer

A method for forming a semiconductor structure, comprising:

• forming a material layer over a substrate;
• forming a resist layer having a first portion and a second portion over the material layer;
• exposing the first portion of the resist layer while the second portion of the resist layer remains unexposed;
• forming a treating material layer over the resist layer to modify a top surface of the first portion of the resist layer;
• removing the treating material layer;
• dissolving the second portion of the resist layer in a developer to form an opening after the modified first portion is formed;
• and
• etching the material layer through the opening,
• wherein the treating material layer comprises a silicon-containing treating compound.

A method for forming a semiconductor structure, comprising:

• forming a material layer over a substrate;
• forming a resist layer over the material layer;
• exposing a first portion of the resist layer;
• reacting a treating compound with a top surface of the first portion of the resist layer to form a modified first portion of the resist layer,
• wherein the treating compound has the following formula:
• wherein R1 is C1-C20 alkyl, C2-C20 alkenyl, C2-C20 alkynyl, C1-C20 alkoxy, C3-C20 cycloalkyl, C5-C20 aryl, or C5-C20 heteroaryl;
• R2 is C1-C20 alkoxy, hydroxyl, hydrogen, C1-C20 alkyl, C2-C20 alkenyl, C2-C20 alkynyl, C3-C20 cycloalkyl, C5-C20 aryl, or C4-C20 heteroaryl;
• R3 is C1-C20 alkoxy, hydroxyl, hydrogen, C1-C20 alkyl, C2-C20 alkenyl, C2-C20 alkynyl, C3-C20 cycloalkyl, C5-C20 aryl, or C4-C20 heteroaryl;
• and
• R4 is C1-C20 alkoxy, hydroxyl, hydrogen, C1-C20 alkyl, C2-C20 alkenyl, C2-C20 alkynyl, C3-C20 cycloalkyl, C5-C20 aryl, or C4-C20 heteroaryl.