Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYao-Wen Hsu, Jian-Jou Lian, Neng-Jye Yang, Chia-Wei Wu, Kuan-Lin Chen, Kuo Bin Huang, Li-Min Chen
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Abstract
A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- exposing a hard mask material to a wet etching solution, the wet etching solution comprising:
- an etching driving force material which is able to react with the hard mask material;
- and
- a chelator solvent which catalyzes the reaction of the etching driving force material and the hard mask material, wherein the chelator solvent is N-(2-hydroxyethyl)-1,2,3,6-tetrahydrophthalimide;
- and
- removing at least a portion of the hard mask material with the wet etching solution.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a hard mask material onto a substrate;
- patterning the hard mask material using a wet etching process, wherein the wet etching process utilizes a semi-aqueous solution, the semi-aqueous solution comprising:
- at least one fluorine donor material;
- and
- a catalyst which allows the fluorine donor material to remove exposed portions of the hard mask material at a pH of between about 5 and about 8, wherein the catalyst comprises N-hydroxyethylphthalimide.
A method of manufacturing a semiconductor device, the method comprising:
- providing a first layer of amorphous silicon;
- and
- etching the first layer of amorphous silicon using a wet etching process that is free of oxidants, the wet etching process using a wet etchant at a pH of between about 5 and about 8, the wet etchant comprising:
- a first fluorine donor material;
- a second fluorine donor material;
- a solvent which chelates with sites on the first layer of amorphous silicon wherein the solvent is N,N-diethanololeamide;
- and
- water.
Dependencies are inferred from the claim text.